Sequential Transport in a Two-Dot Device

Author

Valentin, A. ; Galdin-Retailleau, S. ; Dollfus, P.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. Paris-Sud 11, Orsay

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

A physical model of sequential transport through a device containing two semiconductor nanocrystals has been developed. It is based on (i) the calculation of the nanocrystal phonon modes, (ii) the self consistent calculation of the nanocrystal electronic structure including collisional broadening, (iii) the calculation of tunnelling rates and (iv) the Monte Carlo computation of sequential tunnel transfers. The obtained I-V curve takes the form of a narrow peak whose width decreases with decreasing temperature. Lateral peaks due to phonon-assisted tunnelling appear to be strongly influenced by the temperature and by the surface phonon modes in the dots.

Keywords

Monte Carlo methods; SCF calculations; band structure; electron-phonon interactions; nanostructured materials; semiconductor quantum dots; single electron devices; surface phonons; tunnelling; Monte Carlo computation; collisional broadening; electron-phonon interaction; nanocrystal electronic structure; nanocrystal phonon modes; phonon-assisted tunnelling; self consistent calculation; semiconductor nanocrystals; sequential transport; sequential tunnel transfers; single-electron devices; surface phonon modes; tunnelling rate calculation; two-dot device; Boundary conditions; Electrodes; Electrons; Monte Carlo methods; Nanocrystals; Nonvolatile memory; Phonons; Silicon; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091148

Filename

5091148