• DocumentCode
    2184495
  • Title

    The copper stud bumping shaping simulation based on thermal-solid couple analysis

  • Author

    Shanshan, Zhang ; Jin, Zhang

  • Author_Institution
    Sch. of Machinetronic Eng., Anyang Inst. of Technol., Anyang, China
  • fYear
    2011
  • fDate
    8-11 Aug. 2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    With electronic production tending to be large scale integration, digital, lightweight, small-lot and diversification, the traditional bumping fabrication technologies aren´t compatible with the electronic production such as the personalized, medical implants, military and new product development and so on for cost problem. And then the single chip bumping technology is introduced, among which the stud bumping technology becomes one of the most important technologies due to compatible with wire bonding machine, no UBM, flexible and fine pitch fabrication advantages. However because of the narrow process window of copper stud bumping, easily Si crater and Al sputtering in bonding process, so reasonable setting process parameters is critical. By using of the explicit finite element method which is more suitable for contact and collision simulation, the three dimensional copper stud bumping model is developed, and then the relevant thermal material properties are added into the K file to realize the thermal-solid analysis and validation of the model is verified.
  • Keywords
    aluminium; copper; fine-pitch technology; finite element analysis; lead bonding; silicon; sputtering; Al; Si; collision simulation; copper stud bumping shaping simulation; fine pitch fabrication; finite element method; single chip bumping technology; sputtering; thermal-solid couple analysis; wire bonding machine; Analytical models; Bonding; Copper; Finite element methods; Solid modeling; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1770-3
  • Electronic_ISBN
    978-1-4577-1768-0
  • Type

    conf

  • DOI
    10.1109/ICEPT.2011.6066871
  • Filename
    6066871