Title :
Multi-physics computer simulation of the electromigration phenomenon
Author :
Zhu, Xiaoxin ; Kotadia, Hiren ; Xu, Sha ; Lu, Hua ; Mannan, Samjid H. ; Chan, Y.C. ; Bailey, Chris
Author_Institution :
Sch. of Comput. & Math. Sci., Univ. of Greenwich, London, UK
Abstract :
Previous works on electromigration in microelectronics devices have been reviewed, and a multi-physics EM simulation method that combines electric, thermal, atomic diffusion, and stress analysis has been described. The proposed method can be used to predict the atomic vacancy concentration distribution and void formation in metals or alloys that are subject to current loading.
Keywords :
circuit simulation; electromigration; integrated circuit reliability; stress analysis; atomic diffusion; atomic vacancy concentration distribution; electromigration phenomenon; metal void formation; microelectronics devices; multiphysics EM simulation method; multiphysics computer simulation; stress analysis; Computational modeling; Electromigration; Equations; Mathematical model; Reliability; Stress; Thermal stresses;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
DOI :
10.1109/ICEPT.2011.6066874
