DocumentCode :
2186751
Title :
Thermal properties of semiconductor oxide-confinement vertical-cavity lasers
Author :
Ivanov, P.S. ; Sukkoivanov, I.A. ; Lysak, V.V. ; Kublik, A.V.
Author_Institution :
Kharkiv State Univ. of Radio Electron., Ukraine
fYear :
2000
fDate :
2000
Firstpage :
53
Lastpage :
56
Abstract :
We present results of a thermodynamic model application for the investigation of the oxide-confinement vertical-cavity laser. By including carrier diffusion and thermal propagation equations in the laser dynamics, one can take into account a nonuniform electron transport and heating in the non-symmetrical laser structure. The observed model is useful in analysis of laser dynamics and to further parameter optimization of the vertical-cavity laser structure
Keywords :
laser theory; optimisation; semiconductor device models; semiconductor lasers; surface emitting lasers; symmetry; VCSEL; carrier diffusion; laser dynamics; non-symmetrical laser structure; nonuniform electron transport; oxide-confinement vertical-cavity laser; parameter optimization; semiconductor oxide-confinement vertical-cavity lasers; thermal propagation equations; thermal properties; thermodynamic model application; vertical-cavity laser structure; Electrons; Laser modes; Power lasers; Quantum well lasers; Ring lasers; Semiconductor lasers; Temperature; Thermal conductivity; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2000. Proceedings of LFNM 2000. 2nd International Workshop on
Conference_Location :
Kharkiv
Print_ISBN :
0-7803-6380-9
Type :
conf
DOI :
10.1109/LFNM.2000.854039
Filename :
854039
Link To Document :
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