DocumentCode
2186767
Title
Determination of nonlinear gain coefficients for infrared optical sources
Author
Lysak, V.V. ; Sukhoivanov, I.A.
Author_Institution
Kharkiv State Univ. of Radio Electron., Ukraine
fYear
2000
fDate
2000
Firstpage
57
Lastpage
60
Abstract
The influence of electron concentration on optical gain of a semiconductor lasers is analyzed. The comparison by an integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 Å was carried out. The expression of the approximation model parameter change from the active layer thickness is determined
Keywords
approximation theory; infrared sources; laser theory; nonlinear optics; quantum well lasers; semiconductor device models; 50 to 1000 A; active layer thickness; active layer thickness change; approximation model parameter change; electron concentration; infrared optical sources; integrated gain model; nonlinear gain coefficients; optical gain; semiconductor lasers; Electron optics; Fiber lasers; Fiber nonlinear optics; Gain; Laser modes; Nonlinear optics; Numerical models; Optical saturation; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling, 2000. Proceedings of LFNM 2000. 2nd International Workshop on
Conference_Location
Kharkiv
Print_ISBN
0-7803-6380-9
Type
conf
DOI
10.1109/LFNM.2000.854040
Filename
854040
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