Title :
The influence of the interface trap density on the performance of bipolar devices
Author :
Deferm, L. ; Decoutere, S. ; Claeys, C. ; Declerck, G. ; Heyman, J. ; Beernaert, D.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The influence of the interface trap density on the DC characteristics, the AC performance, and the 1/f noise behavior of both vertical and lateral bipolar transistors of a 40-V BiCMOS process is studied. The interface trap density is changed by using different back-end process steps and is measured using the charge pumping technique. It is found that the increase of the density of interface traps result in a nonacceptable increase of the base current, even for large base-emitter voltages, and in a larger noise factor, whereas the influence on the cutoff frequency is less pronounced
Keywords :
BIMOS integrated circuits; bipolar transistors; electron device noise; integrated circuit technology; interface electron states; 1/f noise behavior; 40 V; 40-V BiCMOS process; AC performance; BiCMOS; DC characteristics; back-end process steps; base current; base-emitter voltages; charge pumping technique; cutoff frequency; interface trap density; lateral bipolar transistors; noise factor; performance of bipolar devices; vertical bipolar transistors; BiCMOS integrated circuits; Bipolar transistors; Current measurement; Cutoff frequency; Density measurement; MOSFETs; Metallization; Noise level; Region 2; Voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69476
