The influence of the interface trap density on the performance of bipolar devices

Author

Deferm, L. ; Decoutere, S. ; Claeys, C. ; Declerck, G. ; Heyman, J. ; Beernaert, D.

Author_Institution

IMEC, Leuven, Belgium

fYear

1989

fDate

18-19 Sep 1989

Firstpage

136

Lastpage

139

Abstract

The influence of the interface trap density on the DC characteristics, the AC performance, and the 1/f noise behavior of both vertical and lateral bipolar transistors of a 40-V BiCMOS process is studied. The interface trap density is changed by using different back-end process steps and is measured using the charge pumping technique. It is found that the increase of the density of interface traps result in a nonacceptable increase of the base current, even for large base-emitter voltages, and in a larger noise factor, whereas the influence on the cutoff frequency is less pronounced

Keywords

BIMOS integrated circuits; bipolar transistors; electron device noise; integrated circuit technology; interface electron states; 1/f noise behavior; 40 V; 40-V BiCMOS process; AC performance; BiCMOS; DC characteristics; back-end process steps; base current; base-emitter voltages; charge pumping technique; cutoff frequency; interface trap density; lateral bipolar transistors; noise factor; performance of bipolar devices; vertical bipolar transistors; BiCMOS integrated circuits; Bipolar transistors; Current measurement; Cutoff frequency; Density measurement; MOSFETs; Metallization; Noise level; Region 2; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69476

Filename

69476