DocumentCode :
2187625
Title :
Thermomigration in Sn58Bi solder joints at low ambient temperature
Author :
Ding, Lan ; Tao, Yuan ; Wu, Yiping
Author_Institution :
Dept. of Mater. Sci. & Eng., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2011
fDate :
8-11 Aug. 2011
Firstpage :
1
Lastpage :
5
Abstract :
This paper investigated the individual effects of thermomigration behavior in Cu/Sn58Bi/Cu solder joints by applying a pure thermal gradient field at an ambient temperature of 20°C. To separate electromigration behavior, a novel apparatus was used to carry out the thermomigration experiment. The thermal finite-element simulation results showed that a sufficient thermal gradient existed in the Cu/Sn58Bi/Cu solder joint during the experiment. After loading a constant thermal gradient for over 100 hours, an obvious phase redistribution phenomenon occurred in the Sn58Bi solder layer. It was found that Bi atoms in the Sn58Bi solder layer had migrated toward the lower temperature side. Meanwhile, Bi-rich phase coarsening was detected in the Sn58Bi solder layer, and with the loading time increased, the Bi-rich phases went on coarsening. After thermomigration for 200 hours, a thin Bi-rich layer formed at the cold side of the Sn58Bi solder layer. Moreover, Kirkendall voids were produced in the intermetallic compound layers, with their number at the hot sides larger than that at the cold side. Compared with the aging test samples, Bi-rich phase aggregation only appeared at the cold side of the solder joint in thermomigration samples while the aggregation appeared at both sides in the 200h-aged samples, which further emphasized the great effects of thermomigration in the Sn58Bi solder joints.
Keywords :
bismuth alloys; copper alloys; cryogenics; electronics packaging; finite element analysis; solders; tin alloys; voids (solid); Bi-rich phase aggregation; Cu-SnBi-Cu; Kirkendall voids; electronic packaging; intermetallic compound layers; low ambient temperature; phase redistribution phenomenon; solder joints; temperature 20 degC; thermal finite-element simulation; thermal gradient field; thermomigration behavior effect; time 200 hour; Aging; Atomic layer deposition; Bismuth; Copper; Electromigration; Lead; Soldering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
Type :
conf
DOI :
10.1109/ICEPT.2011.6066985
Filename :
6066985
Link To Document :
بازگشت