Title :
Submicron enhancement-mode AlGaN/GaN HEMTs
Author :
Moon, J.S. ; Wong, D. ; Hussain, T. ; Micovic, M. ; Deelman, P. ; Ming Hu ; Antcliffe, M. ; Ngo, C. ; Hashimoto, P. ; McCray, L.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
Most recent GaN-based HEMT technology has been focused toward microwave power applications. In this work, we report DC and RF characteristics of the first E-mode AlGaN/GaN HEMTs fabricated down to 0.2 /spl mu/m gatelength, and having an f/sub t/ reaching 25 GHz. Further improvement of E-mode GaN HEMTs could open potential applications for mixed-signal ICs with a high dynamic range.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; mixed analogue-digital integrated circuits; power HEMT; semiconductor device measurement; wide band gap semiconductors; 0.2 micron; 25 GHz; AlGaN-GaN; E-mode HEMT DC/RF characteristics; GaN-based HEMT technology; device gatelength; device operating frequency; microwave power applications; mixed-signal IC applications; submicron enhancement-mode AlGaN/GaN HEMT; Aluminum gallium nitride; Gallium nitride; HEMTs; Laboratories; MODFETs; Microwave devices; Moon; Radio frequency; Schottky diodes; Threshold voltage;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029488
