Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation

Author

Nayfeh, H.M. ; Hoyt, J.L. ; Leitz, C.W. ; Pitera, A.J. ; Fitzgerald, E.A. ; Antoniadis, D.A.

Author_Institution

Dept. of Electrical & Comput. Eng., MIT, Cambridge, MA, USA

fYear

2002

fDate

24-26 June 2002

Firstpage

43

Lastpage

44

Abstract

Inversion layer mobility measurements in strained-Si n-MOSFETs fabricated using a typical MOSFET process including high temperature steps and with various channel doping concentrations, achieved by boron ion implantation, are compared with co-processed bulk-Si n-MOSFETs. It is found that a near-universal mobility relationship with vertical effective electric field, E/sub eff/, exists for strained-Si and bulk-Si n-MOSFETs for all channel implant doses in this study. Significant mobility enhancement for E/sub eff/ up to 2 MV/cm (1.5-1.7 x) is obtained for channel doping concentrations ranging from 10/sup 17/-6 /spl times/ 10/sup 18/ cm/sup -3/.

Keywords

MOSFET; electron mobility; elemental semiconductors; inversion layers; ion implantation; silicon; Si; channel doping concentration; electron inversion layer mobility; ion implantation; strained-Si n-MOSFET; vertical effective electric field; Boron; Dielectric substrates; Doping; Electron mobility; Implants; Ion implantation; MOSFET circuits; Materials science and technology; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2002. 60th DRC. Conference Digest

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-7317-0

Type

conf

DOI

10.1109/DRC.2002.1029497

Filename

1029497