Nano-scale implantless Schottky-barrier SOI FinFETs with excellent ambipolar performance

Author

Horng-Chih Lin ; Meng-Fan Wang ; Fu-Ju Hou ; Jan-Tsai Liu ; Fu-Hsiang Ko ; Hsuen-Li Chen ; Guo-Wei Huang ; Tiao-Yuan Huang ; Sze, S.M.

Author_Institution

Nat. Nano Device Labs., Hsin-Chu, Taiwan

fYear

2002

fDate

24-26 June 2002

Firstpage

45

Lastpage

46

Abstract

A novel nano-scale SOI device featuring silicide Schottky source/drain and field-induced S/D extensions is proposed and demonstrated. Excellent p- and n-channel performance with nearly ideal subthreshold swing (/spl sim/ 60 mV/dec.) and high on-/off-state current ratio (>10/sup 9/ and >10/sup 8/ for n- and p-channel modes, respectively) is realized, for the first time, on a single device. These encouraging results suggest that the new device may represent a potential alternative to post-CMOS device applications.

Keywords

Schottky barriers; field effect transistors; silicon-on-insulator; ambipolar characteristics; field-induced S/D extension; n-channel mode; nano-scale implantless Schottky-barrier SOI FinFET; on/off-state current ratio; p-channel mode; silicide Schottky source/drain; subthreshold swing; Doping; Etching; Fabrication; FinFETs; Fluctuations; Lithography; Nanoscale devices; Oxidation; Silicides; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2002. 60th DRC. Conference Digest

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-7317-0

Type

conf

DOI

10.1109/DRC.2002.1029498

Filename

1029498