• DocumentCode
    2188245
  • Title

    Numerical analysis of temperature and humidity effects on the reliability of high power light emitting diode

  • Author

    Jing, Huang ; Kai-lin, Pan ; Peng, Li ; Shuang-ping, Wang

  • Author_Institution
    Sch. of Mech. & Electr. Eng., Guilin Univ. of Electron. Technol., Guilin, China
  • fYear
    2011
  • fDate
    8-11 Aug. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    High power light emitting diode (HP-LED) as solid-state Lighting (SSL) is a promising light source, and one of the important factors for its wide acceptance is its reliability. [1]Temperature and humidity are two key factors which affect the reliability of HP-LED. Based on the three-dimension model of Multi-chips integrated module LED (MCIM-LED), the effects of temperature and humidity on the reliability of HP-LED are numerically investigated in this paper. The status of thermal conduction and humidity diffusion and the distribution of thermal stress and humidity stress are obtained by the simulation of thermal and humidity respectively. The temperature field reaches equilibrium state in short time, while the stable time of humidity field is dozens of day. In the normal working status, the humidity stress is less than the thermal stress. The results suggest that thermal stress plays a dominant role can be used for the further study on the effects of thermal-humidity coupled on the reliability of HP-LED.
  • Keywords
    humidity; light emitting diodes; reliability; temperature; high power light emitting diode; humidity diffusion; humidity effects; humidity stress; multichips integrated module LED; reliability; solid state lighting; temperature effects; thermal conduction; thermal stress; Electronic packaging thermal management; Humidity; Light emitting diodes; Reliability; Stress; Thermal conductivity; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1770-3
  • Electronic_ISBN
    978-1-4577-1768-0
  • Type

    conf

  • DOI
    10.1109/ICEPT.2011.6067003
  • Filename
    6067003