• DocumentCode
    2188482
  • Title

    A novel variational approach for modeling sub-0.1 micron MOS devices including Quantum Mechanical interface charge confinement effects

  • Author

    Gunther, N.G. ; Mutlu, A.A. ; Rahman, M.

  • Author_Institution
    Dept. of Electr. Eng., Santa Clara Univ., CA, USA
  • fYear
    2002
  • fDate
    24-26 June 2002
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    In this work we develop and demonstrate a novel variational methodology for modeling deep sub-micron (10 nm-100 nm) three-dimensional (3D) MOS devices that includes the important Quantum Mechanical (QM) interface charge confinement effect.
  • Keywords
    MIS devices; semiconductor device models; variational techniques; 10 to 100 nm; deep-sub-micron three-dimensional MOS device; quantum mechanical interface charge confinement; variational model; Capacitance; Doping; Electrostatics; Fluctuations; MOS devices; Matter waves; Poisson equations; Quantum mechanics; Semiconductor process modeling; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2002. 60th DRC. Conference Digest
  • Conference_Location
    Santa Barbara, CA, USA
  • Print_ISBN
    0-7803-7317-0
  • Type

    conf

  • DOI
    10.1109/DRC.2002.1029510
  • Filename
    1029510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2188482