Title :
Stable breakdown characteristics of 600 V LDMOS by extended P-bottom region
Author :
Kim, S.L. ; Jeon, C.K. ; Kim, J.J. ; Choi, Y.S. ; Kim, M.H. ; Kang, H.S. ; Song, C.S.
Author_Institution :
New Technol. Dev. Team, Fairchild Semicond., Kyonggi-do, South Korea
Abstract :
A new LDMOS promising stable hard breakdown characteristics by releasing the crowded electric field at the gate oxide edge is proposed. Extending P-bottom into the n-drift region can stabilize the breakdown characteristics of LDMOS. The numerical calculations and experimental results have shown that a stable breakdown voltage of over 600 V can be obtained when enclosed P-bottom width to P-well is 10 /spl mu/m and a P-top dose of 1/spl times/10/sup 12/ cm/sup -2/ is used.
Keywords :
doping profiles; power MOSFET; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; stability; 10 micron; 600 V; LDMOSFET; P-bottom width; P-top dose; P-well; crowded electric field release; extended P-bottom region; gate oxide edge; n-drift region; numerical calculations; stable breakdown voltage; stable hard breakdown characteristics; AC-DC power converters; Acceleration; Avalanche breakdown; Batteries; Breakdown voltage; Charge carrier processes; Electric breakdown; Power supplies; Semiconductor device breakdown; Switches;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029512
