Stable breakdown characteristics of 600 V LDMOS by extended P-bottom region

Author

Kim, S.L. ; Jeon, C.K. ; Kim, J.J. ; Choi, Y.S. ; Kim, M.H. ; Kang, H.S. ; Song, C.S.

Author_Institution

New Technol. Dev. Team, Fairchild Semicond., Kyonggi-do, South Korea

fYear

2002

fDate

24-26 June 2002

Firstpage

63

Lastpage

64

Abstract

A new LDMOS promising stable hard breakdown characteristics by releasing the crowded electric field at the gate oxide edge is proposed. Extending P-bottom into the n-drift region can stabilize the breakdown characteristics of LDMOS. The numerical calculations and experimental results have shown that a stable breakdown voltage of over 600 V can be obtained when enclosed P-bottom width to P-well is 10 /spl mu/m and a P-top dose of 1/spl times/10/sup 12/ cm/sup -2/ is used.

Keywords

doping profiles; power MOSFET; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; stability; 10 micron; 600 V; LDMOSFET; P-bottom width; P-top dose; P-well; crowded electric field release; extended P-bottom region; gate oxide edge; n-drift region; numerical calculations; stable breakdown voltage; stable hard breakdown characteristics; AC-DC power converters; Acceleration; Avalanche breakdown; Batteries; Breakdown voltage; Charge carrier processes; Electric breakdown; Power supplies; Semiconductor device breakdown; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2002. 60th DRC. Conference Digest

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-7317-0

Type

conf

DOI

10.1109/DRC.2002.1029512

Filename

1029512