Title :
High performance 40-GHz bandpass filters on Si using proton implantation
Author :
Chan, K.T. ; Chen, C.Y. ; Chin, A. ; Hsieh, J.C. ; Liu, J. ; Duh, T.S. ; Lin, W.J.
Author_Institution :
United Microelectron. Cooperation, Hsinchu, Taiwan
Abstract :
We report a very simple process to fabricate high performance filters on Si at 40 GHz using H/sup +/ implantation. The filter has only -3.4 dB loss at peak transmission of 40 GHz with a broad 9 GHz bandwidth, which are the best filter results on Si at mm-wave frequency. In sharp contrast, the filter on 1.5 /spl mu/m SiO/sub 2/ isolated Si has much worse transmission and reflection loss and failed for circuit application.
Keywords :
band-pass filters; doping profiles; elemental semiconductors; hydrogen; ion implantation; losses; millimetre wave filters; silicon; -3.4 dB; 1.5 micron; 40 GHz; 9 GHz; H/sup +/ implantation; RF filter; Si bandpass filters; Si:H; SiO/sub 2/ isolated Si filter; SiO/sub 2/-Si; circuit application; filter bandwidth; filter fabrication process; filter peak transmission loss; mm-wave frequency filter; proton implantation; reflection loss; Band pass filters; Bandwidth; Circuits; Conductivity; Gallium arsenide; Performance loss; Propagation losses; Protons; Radio frequency; Reflection;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029517
