Title :
An enhanced compact waffle MOSFET for RF integrated circuits
Author :
Sang Lam ; Wing Hung Ki ; Ko, P.K. ; Mansun Chan
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Tech., China
Abstract :
Several layout methods have been proposed to increase the compactness of a MOSFET. Among the methods, the waffle layout has been mentioned most in the literature. Nevertheless, it has not been commonly used since its inception. This is simply due to the deficiencies associated with the traditional waffle layout in submicron CMOS technology. In this paper, an enhanced compact and expandable waffle MOSFET for RF circuits is designed and tested. Compared with the multifinger design, the area-efficient waffle MOSFET gives better performance of about 20% higher cut-off frequencies and 2 dB higher RF amplification gain with its compact layout structure.
Keywords :
MOSFET; field effect MMIC; integrated circuit layout; microwave field effect transistors; semiconductor device testing; CMOS technology; MOSFET compactness; MOSFET cut-off frequencies; RF amplification gain; RF integrated circuits; area-efficient waffle MOSFET; compact waffle MOSFET; expandable waffle MOSFET; multifinger design; waffle layout; CMOS process; CMOS technology; Circuit testing; Fingers; MOSFET circuits; Parasitic capacitance; Performance gain; Radio frequency; Radiofrequency integrated circuits; Transconductance;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029520
