Nanoscale memristors: Devices engineering, CMOS integration and novel applications

We scaled the memristor devices in a crossbar arrays down to 8 nm using nanoimprint lithography. With reactive sputtering, we tuned the electrical properties of TiOx based memristors. We developed a silicon oxide device with ultra-thin layer chemically produced oxide that exhibited low voltage and electrode-dependent switching behavior. Finally, we integrated planar memristive devices with CMOS substrates, implementing hybrid circuits with lower switching voltage and better uniformity.