• DocumentCode
    2188729
  • Title

    Research on heat dissipation of high heat flux multi-chip GaN-based white LED lamp

  • Author

    Hou, Fengze ; Yang, Daoguo ; Zhang, G.Q. ; Liu, Dongjing

  • Author_Institution
    Sch. of Mech. & Electr. Eng., Guilin Univ. of Electron. Technol., Guilin, China
  • fYear
    2011
  • fDate
    8-11 Aug. 2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this paper, a novel thermal management method of vapor chamber printed circuit board coupled with sunflower heat sink is presented. The finite element method thermal analysis module of a 110 W multi-chip GaN-based white LED lamp is developed by ANSYS parametric design language and user interface design language, the thermal performance of the LED lamp thus can be analyzed more quickly and efficiently. The simulation results indicate that the overall design of the heat dissipation structure of the LED lamp is reasonable and the effect of heat dissipation is effective and satisfactory, the vapor chamber has higher heat transfer ability, and the sunflower heat sink is perfect for the heat dissipation of multi-chip LED lamp. Therefore, VCPCB coupled with sunflower heat sink is a powerful way for heat dissipation of high heat flux multi-chip GaN-based white LED lamps.
  • Keywords
    III-V semiconductors; LED lamps; cooling; finite element analysis; gallium compounds; heat sinks; printed circuits; thermal management (packaging); wide band gap semiconductors; ANSYS parametric design language; GaN; finite element method; heat dissipation structure; heat transfer; high heat flux multichip white LED lamp; power 110 W; sunflower heat sink; thermal analysis module; thermal management method; user interface design language; vapor chamber printed circuit board; Electronic packaging thermal management; Heat sinks; Heat transfer; Heating; LED lamps; Thermal analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1770-3
  • Electronic_ISBN
    978-1-4577-1768-0
  • Type

    conf

  • DOI
    10.1109/ICEPT.2011.6067020
  • Filename
    6067020