Title :
Modeling of purely strain-induced CEO GaAs/In0.16Al0.84As quantum wires
Author :
Birner, Stefan ; Schuster, Robert ; Povolotskyi, Michael ; Vogl, Peter
Author_Institution :
Dept. of Phys., Walter Schottky Inst., Garching, Germany
Abstract :
We theoretically studied strained quantum wire structures that were grown using the cleaved edge overgrowth technique. Calculations of the strain distribution and wave functions are presented as a tool for optimizing the sample layout in order to enhance confinement energies. The electron and hole wave functions are spatially separated due to the piezoelectric effect. Our numerical simulations show that the confinement energy rises as expected with the thickness of the stressor layer and the width of the overgrown quantum well in agreement with spatially resolved photoluminescence measurements.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; numerical analysis; photoluminescence; piezoelectricity; semiconductor quantum wires; GaAs-In0.16Al0.84As; cleaved edge overgrowth technique; confinement energy; electron wave function; hole wave function; numerical simulation; piezoelectric effect; spatially resolved photoluminescence measurement; strain distribution; strained quantum wire structure; stressor layer thickness; Capacitive sensors; Charge carrier processes; Energy resolution; Gallium arsenide; Numerical simulation; Piezoelectric effect; Quantum mechanics; Spatial resolution; Wave functions; Wire;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-9149-7
DOI :
10.1109/NUSOD.2005.1518102
