InP hot electron transistor with a buried metallic gate for electron emission

Transistors with vertical heterostructures are attractive because of their inherent controllability of the propagating distance. However, a heavily doped layer introduces impurity scattering and carrier-carrier scattering in the base layer. To eliminate the doped layer from the active region, we proposed a hot electron transistor (HET) with a buried metallic gate. In this device, the base layer in the hot electron transistor is replaced by an embedded metal grating, which is forward biased in order to extract carriers from the emitter. Data for the conduction band edge when the device is operated is given. An attractive potential in the undoped region is clearly different from a permeable base transistor, which uses doped channel depletion. In this report, we present an InP HET with a buried metallic gate. To reduce leakage current between emitter and gate, we used freestanding tungsten wire. A simple estimation of the device speed is also presented.