DocumentCode
2188988
Title
Memory device based on a ferroelectric tunnel junction
Author
Contreras, J.R. ; Schubert, J. ; Kohlstedt, H. ; Waser, R.
fYear
2002
fDate
24-26 June 2002
Firstpage
97
Lastpage
98
Abstract
For the first time tunnel junctions with a ferroelectric barrier (FTJ) have been prepared and a bi-stable and highly reproducible hysteresis in the I-V curve and the bias dependence of the dynamic conductance has been measured. This behavior will be discussed in the framework of a possible new effect based on the interplay between the polarization state in the barrier and direct electron tunneling through the barrier.
Keywords
dielectric hysteresis; ferroelectric storage; tunnelling; I-V characteristics; barrier polarization state; bias dependence; dynamic conductance; electron tunneling; ferroelectric tunnel junction; hysteresis; memory device; Atomic force microscopy; Capacitors; Electrodes; Electrons; Ferroelectric films; Ferroelectric materials; Hysteresis; Polarization; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-7317-0
Type
conf
DOI
10.1109/DRC.2002.1029532
Filename
1029532
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