The impact of the wetting layer on the optoelectronic properties of a quantum dash material

Author

Olmo, Mauro ; Gioannini, Mariangela ; Montrosset, Ivo

Author_Institution

Dipt. di Elettronica, Politecnico di Torino, Italy

fYear

2005

fDate

19-22 Sept. 2005

Firstpage

7

Lastpage

8

Abstract

We present a numerical model for the calculation of the electro-optical properties (energy diagram, density of states, gain ...) of a semiconductor quantum dash active material including the presence of the wetting layer (WL) as a uniform film formed at the bottom of the self-assembled quantum dashes. The numerical results show that the WL significantly changes the density of states and reduces the gain from the excited state confined in the dashes.

Keywords

III-V semiconductors; aluminium compounds; electro-optical effects; electronic density of states; gallium arsenide; indium compounds; nanostructured materials; self-assembly; semiconductor quantum dots; InAs-InAlGaAs; density of states; electro-optical properties; energy diagram; excited state confinement; numerical model; optoelectronic properties; quantum dash material; self-assembled quantum dashes; semiconductor quantum dash active material; wetting layer impact; Filling; Nanostructured materials; Numerical models; Optical films; Optical materials; Quantum dots; Quantum mechanics; Self-assembly; Semiconductor films; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-9149-7

Type

conf

DOI

10.1109/NUSOD.2005.1518108

Filename

1518108