Title :
Room temperature grown zirconia/SiO/sub 2/ dielectric stacks with 1 nm EOT
Author :
Ramanathan, S. ; McIntyre, P.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
Abstract :
Metal-oxide films such as zirconia and hafnia are currently being investigated to replace silicon dioxide as the gate dielectric material in future CMOS devices. It is important to develop processing science to grow these dielectric films of high electrical quality. Previously, we have grown zirconia films by ultraviolet ozone oxidation (UVO) on chemical oxide with electrical thickness ranging from 1.6 - 2.0 nm. In this study, the UVO method has been used to grow both ultra-thin zirconia films and sub-nanometer thick SiO/sub 2/ films at room temperature.
Keywords :
CMOS integrated circuits; dielectric thin films; oxidation; semiconductor device measurement; silicon compounds; zirconium compounds; 1 nm; CMOS applications; O/sub 3/; SiO/sub 2/; UVO method; ZrO/sub 2/; ZrO/sub 2//SiO/sub 2/ room temperature grown dielectric stacks; dielectric thin film growth; equivalent oxide thickness; film electrical thickness; hafnia; metal-oxide films; silicon dioxide gate dielectric material; ultraviolet ozone oxidation; zirconia; Dielectric films; Dielectric thin films; Leakage current; Materials science and technology; Oxidation; Semiconductor films; Silicon; Stress; Temperature; Voltage;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029535
