Microscopic theory of nonequilibrium effects in semiconductor laser structures

Author

Thränhardt, A. ; Koch, S.W. ; Hader, J. ; Moloney, J.V.

Author_Institution

Dept. of Phys., Marburg Univ., Germany

fYear

2005

fDate

19-22 Sept. 2005

Firstpage

13

Lastpage

14

Abstract

A quantitative analysis of carrier and LO phonon scattering is presented. For quantification of scattering, effective times for carrier-carrier and carrier-phonon scattering are extracted from a microscopic calculation for different structures. A large variance is observed depending on the material parameters, sometimes providing counter-examples to popularly established approximations used e.g. in laser simulations. Microscopically calculated times may be used for parameter studies in a nonequilibrium laser model.

Keywords

electron-electron scattering; electron-phonon interactions; semiconductor lasers; LO phonon scattering; carrier-carrier scattering; carrier-phonon scattering; laser simulation; material parameter; microscopic theory; nonequilibrium effects; nonequilibrium laser model; semiconductor laser structure; variance; Laser modes; Laser theory; Microscopy; Optical scattering; Particle scattering; Phonons; Plasma temperature; Quantum well lasers; Semiconductor lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-9149-7

Type

conf

DOI

10.1109/NUSOD.2005.1518111

Filename

1518111