Title :
Graph-based quantum integrated circuits using III-V mulch-branch nanowire networks and their nano-Schottky gate control
Author :
Kasai, S. ; Yumoto, M. ; Fukushi, T. ; Muranaka, T. ; Hasegawa, H.
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
Beyond the scaling limit of Si CMOS LSls, one envisages nanoelectronics based on quantum devices. To realize quantum LSls (Q-LSIs), however, a novel architecture is required that is suitable to non-robust and charge-sensitive quantum devices which manipulate a single or a few electrons. The cascaded logic gate architecture in Si LSIs is utterly unsuitable. The purpose of this paper is to propose a graph-based Q-LSI architecture and to investigate its basic feasibility by forming of high-density GaAs-based and InP-based multi-branch nanowire networks and controlling them by nanometer-scale Schottky gates.
Keywords :
III-V semiconductors; Schottky barriers; gallium arsenide; graph theory; indium compounds; large scale integration; nanoelectronics; quantum gates; GaAs; III-V multi-branch nanowire network; InP; graph-based quantum integrated circuit; logic gate; nano-Schottky gate control; nanoelectronics; quantum LSI architecture; quantum device; Chemicals; Data structures; Electrons; Etching; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Logic functions; Nanoscale devices; Wire;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029536