Title :
A novel millimeter-wave IC on Si substrate using flip-chip bonding technology
Author :
Sakai, H. ; Ota, Y. ; Inoue, K. ; Yoshida, T. ; Takahashi, K. ; Fujita, S. ; Sagawa, M.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
A new MM-wave IC, constructed by flip-chip bonded heterojunction transistors and microstrip lines formed on Si substrate, has been proposed and demonstrated. Good agreements between calculated and measured characteristics of this new IC (named MFIC: millimeter-wave flip-chip IC) have been obtained up to 60 GHz band by using micro bump bonding technology. Several MFICs such as HFET/HBT amplifiers have been fabricated to confirm their designed performance.<>
Keywords :
flip-chip devices; hybrid integrated circuits; integrated circuit technology; lead bonding; microwave integrated circuits; silicon; substrates; 60 GHz; EHF; HBT amplifiers; HFET amplifiers; MM-wave IC; Si; Si substrate; flip-chip bonding technology; heterojunction transistors; micro bump bonding technology; microstrip lines; millimeter-wave IC; millimeter-wave flip-chip IC; Bonding; HEMTs; Heterojunction bipolar transistors; MODFETs; Microstrip; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Submillimeter wave integrated circuits;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335100
