Title :
Analysis of InGaN/GaN VCSELs
Author :
Piprek, Joachim ; Farrell, Robert ; DenBaars, Steve ; Nakamura, Shuji
Author_Institution :
Mater. Dept., California Univ., Santa Barbara, CA, USA
Abstract :
We investigate the internal physical mechanisms that have thus far prevented current-injected GaN-based VCSELs from lasing. Advanced device simulation is applied to a previously manufactured device design featuring dielectric mirrors and an ITO current injection layer. Built-in polarization, electron leakage across the active region, and lateral carrier non-uniformity within the quantum wells are identified as major obstacles to lasing. Design improvements are proposed.
Keywords :
III-V semiconductors; dielectric materials; gallium compounds; indium compounds; mirrors; optical design techniques; surface emitting lasers; ITO; ITO current injection layer; InGaN-GaN; InSnO; VCSEL; built-in polarization; dielectric mirrors; electron leakage; internal physical mechanism; lateral carrier; manufactured device design; quantum wells; Aluminum gallium nitride; Electron optics; Gallium nitride; Indium tin oxide; Nonlinear optics; Optical polarization; Optical pumping; Optical sensors; Quantum well devices; Vertical cavity surface emitting lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-9149-7
DOI :
10.1109/NUSOD.2005.1518114
