Title :
Large signal S parameter characterization of high power FET chips
Author :
Khandavalli, C. ; Abey, W.
Author_Institution :
Fujitsu Compound Semiconductor Inc., San Jose, CA, USA
Abstract :
Large signal S parameters have been measured up to 12 GHz on high power (6 W) 18 mm gate width FET chips. The unique feature of this method is its ability to measure both forward (S/sub 11/,S/sub 21/) as well as reverse (S/sub 12/,S/sub 22/) parameters while the chip is operating under high power levels. The paper describes an approach that deals with extremely low impedance levels (0.5 ohm or VSWRs >90:1). The test setup employs HP8510C configured with HP8511A test set and is controlled by software to set up a non 50 ohm impedance environment with full 2 port error correction capability. We present the locus of each S parameter of the chip as a function of its output power level ranging from 20 mW through 6 W.<>
Keywords :
MMIC; S-parameters; automatic testing; error correction; field effect integrated circuits; integrated circuit testing; microwave measurement; power integrated circuits; power transistors; 12 GHz; 2 port error correction capability; 20 mW to 6 W; HP8510C; HP8511A test set; forward parameters; high power FET chips; high power level operation; large signal S-parameter characterization; reverse parameters; Error correction; FETs; Impedance; Power generation; Power measurement; Scattering parameters; Semiconductor device measurement; Software testing;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335104
