Title :
Thin film encapsulation for OLED display using silicon nitride and silicon oxide composite film
Author :
Sang, Renzheng ; Zhang, Hao ; Long, Li ; Hua, Zikai ; Yu, Jianling ; Wei, Bin ; Wu, Xingyang ; Feng, Tao ; Zhang, Jianhua
Author_Institution :
Key Lab. of Adv. Display & Syst. Applic., Shanghai Univ., Shanghai, China
Abstract :
In this paper, SiNx and SiOx films for OLED encapsulation were deposited by plasma-enhanced chemical vapor deposition (PECVD). The properties, including surface roughness, scratch adhesion between the films and substrates, water vapor permeation rate were investigated. The results showed that the root-mean-square (Rms) surface roughness of encapsulation film could be improved from 2.7 nm to 1.2 nm by depositing SiNx onto SiOx film. The SiOx film exhibited stronger adhesion strength to PET substrates compared with SiNx. The moisture barrier capability was enhanced immensely when SiOx/SiNx composite film instead SiNx or SiOx film. Moreover, according to the tests results, OLED devices were designed and fabricated on plastic substrates, were encapsulated with the optimized SiOx/SiNx composite film. The OLED devices can keep emitting during bending, the films were not found to crack. The results indicate that SiOx/SiNx composite film is a potential choice for the OLED encapsulation. Then more tests are needed in order to get a more precise investigation.
Keywords :
LED displays; adhesion; composite materials; encapsulation; organic light emitting diodes; plasma CVD; silicon compounds; surface roughness; thin film devices; OLED display; PECVD; PET substrate; SiNx-SiOx; adhesion strength; composite film; moisture barrier capability; plasma-enhanced chemical vapor deposition; plastic substrate; root-mean-square; scratch adhesion; surface roughness; thin film encapsulation; water vapor permeation rate; Adhesives; Encapsulation; Films; Moisture; Organic light emitting diodes; Silicon; Substrates;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
DOI :
10.1109/ICEPT.2011.6067036