• DocumentCode
    2189355
  • Title

    Molecular-scale transistors based on self-assembled monolayers

  • Author

    Schon, J.H.

  • Author_Institution
    Lucent Technol. Bell Labs., Murray Hill, NJ, USA
  • fYear
    2002
  • fDate
    24-26 June 2002
  • Firstpage
    119
  • Lastpage
    120
  • Abstract
    The advances in the field of nanotechnology have led to various measurements of electrical properties on the molecular scale for both single molecule devices and devices based on a monolayer of an array of molecules. However, most of the previous work has been focused on two-terminal devices. In contrast to that, three-terminal devices, i.e. transistors, could offer several advantages for logic operations, the most important being ´gain´. Recently, we demonstrated the possibility to modulate the conductance through a single molecular layer (∼10-20 Å) and even single active molecules by a third gate electrode (J.H. Schon et al., Adv. Mater. vol. 14, p. 232, 2002). Moreover, significant gain can be achieved in such devices at room temperature and has been achieved for approximately 15 molecules. In order to identify the switching mechanism we studied the charge transport through single benzene-1,4-dithiolate molecules embedded in an inert matrix of insulating alkanethiol molecules in a vertical three-terminal device structure.
  • Keywords
    electrodes; molecular electronics; monolayers; nanoelectronics; self-assembly; 10 to 20 angstrom; 20 C; charge transport; conductance modulation; gain; gate electrode; inert insulating alkanethiol molecule matrix; logic operations; molecular scale electrical properties; molecular-scale transistors; monolayer devices; nanotechnology; self-assembled monolayers; single active molecules; single benzene-1,4-dithiolate molecules; single molecular layer; single molecule devices; switching mechanism; three-terminal devices; transistors; two-terminal devices; vertical three-terminal device structure; Assembly; Electric variables measurement; Electrodes; Extraterrestrial measurements; Insulation; Logic devices; Nanotechnology; Self-assembly; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2002. 60th DRC. Conference Digest
  • Conference_Location
    Santa Barbara, CA, USA
  • Print_ISBN
    0-7803-7317-0
  • Type

    conf

  • DOI
    10.1109/DRC.2002.1029545
  • Filename
    1029545