DocumentCode
2189413
Title
High yield GaAs flip-chip MMICs lead to low cost T/R modules
Author
Felton, L.M.
Author_Institution
Hughes Aircraft Co., Fullerton, CA, USA
fYear
1994
fDate
23-27 May 1994
Firstpage
1707
Abstract
A flip-chip design and assembly technique has been developed for GaAs MMICs resulting in lower fabrication costs and improved module yields. Plated bumps on the face of the MMIC are used as a replacement for wirebonds to interconnect all DC and RF signals. Wafer thinning, backside via etch, and backside plating steps have been eliminated, resulting in both higher fabrication yields and improved assembly yields. Microstrip matching networks have been replaced with uniplanar transmission structures such as Coplanar Waveguide (CPW) and spiral inductors. RF data will be shown to validate the design and assembly methods. Results will be shown indicating that flipped high-power MMICs provide lower thermal resistances than their unflipped counterparts, resulting in lower junction temperatures and improved reliability.<>
Keywords
III-V semiconductors; MMIC; flip-chip devices; gallium arsenide; integrated circuit technology; microassembling; modules; Coplanar Waveguide; DC signals; GaAs; GaAs MMICs; RF signals; assembly; fabrication; flip-chip design; high-power MMICs; interconnect; junction temperatures; low cost T/R modules; module yields; plated bumps; reliability; spiral inductors; thermal resistances; uniplanar transmission structures; Assembly; Coplanar waveguides; Costs; Etching; Fabrication; Gallium arsenide; Inductors; MMICs; Microstrip; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335112
Filename
335112
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