• DocumentCode
    2189426
  • Title

    Numerical analysis of GaInP solar cells: toward advanced photovoltaic devices modeling

  • Author

    Baudrit, M. ; Algora, C. ; Rey-Stolle, I. ; García, I. ; Galiana, B.

  • Author_Institution
    Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
  • fYear
    2005
  • fDate
    19-22 Sept. 2005
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    In this paper we will focus on the GaInP solar cell. By using a numerical analysis, we could calculate the External Quantum Efficiency and the performance of the device taking into account many material and structure parameters. By fitting the calculated data and the experimental ones we can determine the exact structure further confirmed by SEM measurements. This process will be very useful to validate the simulation input parameters, to explain the behavior of a device and then to optimize the layers structure according to the requirements of this top cell into the multi-junction solar cells. In our case we are simulating concentrator solar cells, this means they are much smaller than the normal ones.
  • Keywords
    III-V semiconductors; digital simulation; gallium compounds; numerical analysis; photovoltaic effects; semiconductor junctions; solar cells; solar energy concentrators; GaInP; GaInP solar cells; SEM measurement; advanced photovoltaic devices modeling; cell structure parameter; concentrator solar cell simulation; device behavior; device material; device performance; external quantum efficiency calculation; layers structure optimization; multijunction solar cells; numerical analysis; top cell; Costs; III-V semiconductor materials; Numerical analysis; Photovoltaic cells; Photovoltaic systems; Predictive models; Radiative recombination; Scanning electron microscopy; Semiconductor process modeling; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
  • Print_ISBN
    0-7803-9149-7
  • Type

    conf

  • DOI
    10.1109/NUSOD.2005.1518125
  • Filename
    1518125