Title :
Numerical analysis of GaInP solar cells: toward advanced photovoltaic devices modeling
Author :
Baudrit, M. ; Algora, C. ; Rey-Stolle, I. ; García, I. ; Galiana, B.
Author_Institution :
Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
Abstract :
In this paper we will focus on the GaInP solar cell. By using a numerical analysis, we could calculate the External Quantum Efficiency and the performance of the device taking into account many material and structure parameters. By fitting the calculated data and the experimental ones we can determine the exact structure further confirmed by SEM measurements. This process will be very useful to validate the simulation input parameters, to explain the behavior of a device and then to optimize the layers structure according to the requirements of this top cell into the multi-junction solar cells. In our case we are simulating concentrator solar cells, this means they are much smaller than the normal ones.
Keywords :
III-V semiconductors; digital simulation; gallium compounds; numerical analysis; photovoltaic effects; semiconductor junctions; solar cells; solar energy concentrators; GaInP; GaInP solar cells; SEM measurement; advanced photovoltaic devices modeling; cell structure parameter; concentrator solar cell simulation; device behavior; device material; device performance; external quantum efficiency calculation; layers structure optimization; multijunction solar cells; numerical analysis; top cell; Costs; III-V semiconductor materials; Numerical analysis; Photovoltaic cells; Photovoltaic systems; Predictive models; Radiative recombination; Scanning electron microscopy; Semiconductor process modeling; Solar power generation;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-9149-7
DOI :
10.1109/NUSOD.2005.1518125
