DocumentCode
2189665
Title
A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBE
Author
Wonill Ha ; Gambin, V. ; Bank, S. ; Wistey, M. ; Yuen, H. ; Seongsin Kim ; Harris, J.S., Jr.
Author_Institution
Solid State & Photonics Lab., Stanford Univ., CA, USA
fYear
2002
fDate
24-26 June 2002
Firstpage
139
Lastpage
140
Abstract
We have varied growth parameters including group III and V growth rates, Sb flux, and N concentration, in the MBE growth of GaInAs(Sb)/GaAs quantum well lasers. We have found that it is possible to maintain high photoluminescence intensity for samples above 1.5 /spl mu/m. By introducing the optimum Sb flux and cracking temperature, In incorporation up to 50% becomes possible. To our knowledge, this is the highest In incorporation on GaAs reported without relaxation of the crystal.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; 1.5 micron; GaAs substrate; GaInAsSb quantum well laser; GaInAsSb-GaAs; MBE growth; photoluminescence; Gallium arsenide; Molecular beam epitaxial growth; Optical pumping; Optical waveguides; Pump lasers; Quantum well lasers; Semiconductor optical amplifiers; Stimulated emission; Substrates; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-7317-0
Type
conf
DOI
10.1109/DRC.2002.1029556
Filename
1029556
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