Title :
A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBE
Author :
Wonill Ha ; Gambin, V. ; Bank, S. ; Wistey, M. ; Yuen, H. ; Seongsin Kim ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
We have varied growth parameters including group III and V growth rates, Sb flux, and N concentration, in the MBE growth of GaInAs(Sb)/GaAs quantum well lasers. We have found that it is possible to maintain high photoluminescence intensity for samples above 1.5 /spl mu/m. By introducing the optimum Sb flux and cracking temperature, In incorporation up to 50% becomes possible. To our knowledge, this is the highest In incorporation on GaAs reported without relaxation of the crystal.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; 1.5 micron; GaAs substrate; GaInAsSb quantum well laser; GaInAsSb-GaAs; MBE growth; photoluminescence; Gallium arsenide; Molecular beam epitaxial growth; Optical pumping; Optical waveguides; Pump lasers; Quantum well lasers; Semiconductor optical amplifiers; Stimulated emission; Substrates; Waveguide lasers;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029556
