Title :
The microwave Doherty amplifier
Author :
McMorrow, R.J. ; Upton, D.M. ; Maloney, P.R.
Author_Institution :
Equipment Div., Raytheon Co., Wayland, MA, USA
Abstract :
A microwave Doherty amplifier has been designed using PHEMT devices in a novel configuration at L-band. Power-added efficiency of 61% is achieved at -1 dB gain compression in CW and is maintained at 61% at 5.5 dB back-off from the above point. The theory, design and measurement for this new amplifier are discussed.<>
Keywords :
high electron mobility transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; ultra-high-frequency amplifiers; 1370 MHz; 61 percent; Al/sub 2/O/sub 3/; L-band; PHEMT devices; UHF amplifier; alumina substrate; microwave Doherty amplifier; power-added efficiency; pseudomorphic HEMT; Gain; L-band; Microwave amplifiers; Microwave devices; PHEMTs;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335123
