Technology and performance of submicron metal-semiconductor-metal GaN ultraviolet detectors

Author

Palacios, T. ; Monroy, E. ; Calle, F. ; Omnes, F.

Author_Institution

ETSI de Telecomunicacion, Univ. Politecnica de Madrid, Spain

fYear

2002

fDate

24-26 June 2002

Firstpage

141

Lastpage

142

Abstract

The technology of III-nitrides still presents some difficulties that have impeded the fabrication of submicron MSM devices. In this work, the fabrication process, simulation and characterization of submicron MSM photodetectors is described. MSM detectors with finger width and pitch ranging from 0.5 to 4 /spl mu/m were fabricated by e-beam lithography. Due to the high resistivity of the epilayers, a novel resist/metal scheme was applied to allow the evacuation of the injected electrons. This scheme is essential in the development of submicron detectors.

Keywords

III-V semiconductors; electron beam lithography; gallium compounds; metal-semiconductor-metal structures; ultraviolet detectors; wide band gap semiconductors; 0.5 to 4 micron; GaN; e-beam lithography; fabrication process; finger width; pitch; resist/metal scheme; resistivity; submicron metal-semiconductor-metal devices; ultraviolet detectors; Conductivity; Detectors; Electrons; Fabrication; Fingers; Gallium nitride; Impedance; Lithography; Photodetectors; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2002. 60th DRC. Conference Digest

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-7317-0

Type

conf

DOI

10.1109/DRC.2002.1029558

Filename

1029558