Title :
Technology and performance of submicron metal-semiconductor-metal GaN ultraviolet detectors
Author :
Palacios, T. ; Monroy, E. ; Calle, F. ; Omnes, F.
Author_Institution :
ETSI de Telecomunicacion, Univ. Politecnica de Madrid, Spain
Abstract :
The technology of III-nitrides still presents some difficulties that have impeded the fabrication of submicron MSM devices. In this work, the fabrication process, simulation and characterization of submicron MSM photodetectors is described. MSM detectors with finger width and pitch ranging from 0.5 to 4 /spl mu/m were fabricated by e-beam lithography. Due to the high resistivity of the epilayers, a novel resist/metal scheme was applied to allow the evacuation of the injected electrons. This scheme is essential in the development of submicron detectors.
Keywords :
III-V semiconductors; electron beam lithography; gallium compounds; metal-semiconductor-metal structures; ultraviolet detectors; wide band gap semiconductors; 0.5 to 4 micron; GaN; e-beam lithography; fabrication process; finger width; pitch; resist/metal scheme; resistivity; submicron metal-semiconductor-metal devices; ultraviolet detectors; Conductivity; Detectors; Electrons; Fabrication; Fingers; Gallium nitride; Impedance; Lithography; Photodetectors; Resists;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029558
