Title :
Temperature dependence of emitter-base reverse stress degradation and its mechanism analyzed by MOS structures
Author :
Momose, Hisayo Sasaki ; Nitsu, Y. ; Iwai, Hiroshi ; Maeguchi, Kenji
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
Different degradation modes were observed under high and low reverse stress current conditions. The temperature dependence of the gradation was studied, and it was found that the degradation is greatest around 50°C. The mechanisms of the degradation and its recovery were also investigated, using MOS structures and simulation. MOSFET evaluation indicated that electron trapping and interface state generation occur during the stress. Simulation confirmed that the degradation is caused mainly by the interface states generated in the oxide near the emitter-base junction
Keywords :
bipolar transistors; electron traps; interface electron states; metal-insulator-semiconductor structures; semiconductor device models; 50 degC; MOS structures; MOSFET evaluation; Si-SiO2; bipolar transistors; degradation mechanism; degradation modes; electron trapping; emitter-base junction; emitter-base reverse stress degradation; high reverse stress current conditions; interface state generation; interface states in oxide; low reverse stress current conditions; recovery mechanism; temperature dependence; Bipolar transistors; Degradation; Electrons; Interface states; MOSFET circuits; Semiconductor devices; Stress measurement; Temperature dependence; Temperature distribution; Ultra large scale integration;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69477
