Temperature dependence of emitter-base reverse stress degradation and its mechanism analyzed by MOS structures

Author

Momose, Hisayo Sasaki ; Nitsu, Y. ; Iwai, Hiroshi ; Maeguchi, Kenji

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1989

fDate

18-19 Sep 1989

Firstpage

140

Lastpage

143

Abstract

Different degradation modes were observed under high and low reverse stress current conditions. The temperature dependence of the gradation was studied, and it was found that the degradation is greatest around 50°C. The mechanisms of the degradation and its recovery were also investigated, using MOS structures and simulation. MOSFET evaluation indicated that electron trapping and interface state generation occur during the stress. Simulation confirmed that the degradation is caused mainly by the interface states generated in the oxide near the emitter-base junction

Keywords

bipolar transistors; electron traps; interface electron states; metal-insulator-semiconductor structures; semiconductor device models; 50 degC; MOS structures; MOSFET evaluation; Si-SiO₂; bipolar transistors; degradation mechanism; degradation modes; electron trapping; emitter-base junction; emitter-base reverse stress degradation; high reverse stress current conditions; interface state generation; interface states in oxide; low reverse stress current conditions; recovery mechanism; temperature dependence; Bipolar transistors; Degradation; Electrons; Interface states; MOSFET circuits; Semiconductor devices; Stress measurement; Temperature dependence; Temperature distribution; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69477

Filename

69477