Title :
A 0.1 /spl mu/m GaAs MESFET technology for ultra-high-speed digital and analog IC
Author :
Tokumitsu, M. ; Hirano, M. ; Murata, K. ; Imai, Yuki ; Yamasaki, K.
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
A 0.1 /spl mu/m gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; gallium arsenide; 0.1 /spl mu/m gate-length; 0.1 mum; 100 GHz; 100 GHz cut-off frequency MESFETs; 17.5 GHz; 20 dB; 48.3 GHz; BP-LDD device structure; GaAs; GaAs IC technology; GaAs MESFET technology; amplifier; dynamic-frequency divider; ultra-high-speed analog IC; ultra-high-speed digital IC; Bandwidth; Cutoff frequency; Frequency conversion; Gain; Gallium arsenide; MESFETs;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335129
