DocumentCode
2189882
Title
Comparison of k.p models for quantum well optoelectronic devices
Author
Mensz, P.M. ; Li, Z.S.
Author_Institution
Crosslight Software Inc., Burnaby, BC, Canada
fYear
2005
fDate
19-22 Sept. 2005
Firstpage
75
Lastpage
76
Abstract
The objective of this study is to establish quantitatively the applicability of different k.p models for zincblende quantum wells. A well known material system of GaAs/AlGaAs QW was used for benchmarking purpose here. The axial approximation in 4×4 and 6×6 is clear winner in terms of accuracy/computational time, while the full angle average model of 8×8 should be reserved for benchmarking purpose.
Keywords
k.p calculations; optoelectronic devices; quantum well devices; semiconductor quantum wells; zinc compounds; GaAs-AlGaAs; benchmarking purpose; k.p model; material system; quantum well optoelectronic devices; zincblende quantum wells; Effective mass; Finite difference methods; Gallium arsenide; Numerical models; Optical computing; Optical devices; Optical mixing; Optoelectronic devices; Partial differential equations; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN
0-7803-9149-7
Type
conf
DOI
10.1109/NUSOD.2005.1518142
Filename
1518142
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