DocumentCode :
2189923
Title :
Bismuth tri-iodide polycrystalline films for digital X-ray radiography applications
Author :
Fornaro, L. ; Saucedo, E. ; Mussio, L. ; Gancharov, A. ; Cuna, A.
Author_Institution :
Radiochem. Dept., Univ. of Uruguay, Montevideo, Uruguay
Volume :
1
fYear :
2002
fDate :
10-16 Nov. 2002
Firstpage :
33
Abstract :
Bismuth tri-iodide polycrystalline films were grown by the physical vapor deposition method. Glass 1" × 1" in size was used as the substrate. Palladium was deposited previously onto the substrates as the rear contact. For growth, bismuth triiodide 99.999% was heated at 130 - 170°C under high vacuum atmosphere (5 × 10-5 mmHg) or under Ar pressure for 20 hours. Film thickness was measured by the X-ray transmission of 59.5 keV 241Am emission, giving values ranging from 90 to 130 μm (5%). Film grain size was measured by scanning electron microscopy, and it gave an average of (50 ± 20) μm. Detectors were made with the films by depositing palladium as the front contact (contact area 4 mm2) and then performing acrylic encapsulation.
Keywords :
X-ray detection; X-ray imaging; bismuth compounds; diagnostic radiography; encapsulation; grain size; scanning electron microscopy; solid scintillation detectors; vacuum deposited coatings; vacuum deposition; 1 inch; 130 to 170 C; 20 hour; 59.5 keV; 90 to 130 micron; BiI3; PVD; SEM; acrylic encapsulation; detectors; digital X-ray radiography; grain size; high vacuum atmosphere; physical vapor deposition; polycrystalline films; scanning electron microscopy; Argon; Atmosphere; Atmospheric measurements; Bismuth; Chemical vapor deposition; Glass; Palladium; Radiography; Substrates; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2002 IEEE
Print_ISBN :
0-7803-7636-6
Type :
conf
DOI :
10.1109/NSSMIC.2002.1239263
Filename :
1239263
Link To Document :
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