Title :
Multilayer tunneling barriers for nonvolatile memory applications
Author :
Blomme, P. ; Govoreanu, B. ; Rosmeulen, M. ; Van Houdt, J. ; De Meyer, K.
Author_Institution :
STDI Div., IMEC, Leuven, Belgium
Abstract :
A tunnel barrier consisting of two materials with different dielectric constant is demonstrated to show that improved programming and/or erasing performance is obtained compared to conventional oxide layers. It is also shown that charge trapping is not a showstopper for the application of such stacks in floating gate nonvolatile memory devices.
Keywords :
EPROM; MOS capacitors; dielectric thin films; flash memories; tunnelling; EEPROM; SiO/sub 2/-ZrO/sub 2/; SiO/sub 2//ZrO/sub 2/ stacks; capacitors; charge trapping; erasing performance; flash memory; floating gate nonvolatile memories; multilayer tunneling barriers; nonvolatile memory applications; programming performance; Capacitors; Dielectric constant; EPROM; High K dielectric materials; Lead compounds; Low voltage; Nonhomogeneous media; Nonvolatile memory; Testing; Tunneling;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029569
