Finite element ATLAS/FEMLAB joint simulation of optoelectronic devices

This contribution details a simulation strategy for the accurate prediction of the performances of InP-based photonic devices. By means of a commercially available finite-element solver, the device is simulated in order to exactly account for the distribution of carriers in the guiding region while an in-house code calculates the refractive index profile. Due to semiconductor nature of the multilayer substrate, this is proved to be important in order to consider the effects of carriers in the depleted region that contributes together with the linear and quadratic electric-field related to the overall refractive index change. As an application, the functionalities of an ultra-fast phase shifting section have been simulated with the proposed approach.