Title :
New design of X-band GaAs MMIC phase shifter using improved equivalent circuit model
Author :
Takasu, H. ; Watanabe, S. ; Maeda, M. ; Miyauchi, M. ; Kamihashi, S. ; Ohtomo, M.
Author_Institution :
Komukai Works, Toshiba Corp., Kawasaki, Japan
Abstract :
An improved yet simple equivalent circuit of a GaAs FET switch is proposed that takes parasitic distributed-line effects of the FET into account. X-band five-bit GaAs MMIC phase shifters designed using the model show a good agreement between the design and the measurement.<>
Keywords :
III-V semiconductors; MMIC; S-parameters; equivalent circuits; field effect transistors; gallium arsenide; phase shifters; semiconductor device models; semiconductor switches; solid-state microwave devices; GaAs; GaAs FET switch; MMIC phase shifter; X-band; equivalent circuit model; parasitic distributed-line effects; Equivalent circuits; FETs; Gallium arsenide; MMICs; Phase measurement; Phase shifters; Switches; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335146
