DocumentCode :
2190273
Title :
A high gain dual-fed single stage distributed amplifier
Author :
Moazzam, M.R. ; Aitchison, C.S.
Author_Institution :
Dept. of Electr. Eng. & Electron., Brunel Univ., Uxbridge, UK
fYear :
1994
fDate :
23-27 May 1994
Firstpage :
1409
Abstract :
This paper describes a novel microwave single stage distributed amplifier configuration based on the dual-fed distributed amplification technique. In this configuration the input and output line idle ports are reactively terminated, This results in a significant improvement in gain and power added efficiency over conventional and dual-fed distributed amplifier. The amplifier band of operation can be tuned by varying the terminating reactances. This novel configuration can also be used as a tuneable oscillator over a decade by direct feedback.<>
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; microwave amplifiers; solid-state microwave circuits; tuning; direct feedback; dual-fed distributed amplification technique; high gain type; microwave single stage distributed amplifier; power added efficiency; reactively terminated idle ports; single stage distributed amplifier; tuneable oscillator; Distributed amplifiers; Feedback; Microwave theory and techniques; Operational amplifiers; Oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1778-5
Type :
conf
DOI :
10.1109/MWSYM.1994.335147
Filename :
335147
Link To Document :
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