Title :
An 8-channel CMOS low-noise fast readout IC for CZT X-ray detectors designed by time-domain Hspice noise simulation
Author :
Lee, T.H. ; Hong, S.B. ; Cho, G. ; Kim, Y.K. ; Chung, C.E. ; Chi, Y.K.
Author_Institution :
Dept. of Nucl. & Quantum Eng., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea
Abstract :
An 8-channel CMOS low-noise readout IC is designed for CdZnTe (CZT) X-ray detector arrays. One channel of the IC is composed of a continuously discharged preamplifier and a comparator. The preamplifier is operated in pulse-mode and this is realized with a feedback capacitor and a pair of MOSFETs. The noise of this readout IC is calculated by the time-domain Hspice noise simulation. The operation region of this readout IC is over 10 MHz, so the thermal noise of the input transistor dominates over the detector shot noise and the 1/f noise of the input transistor. The calculated RMS total noise voltage at the output node of the preamplifier is 0.246 mV. The prototype chip is fabricated in 1.5 μm CMOS technology through MOSIS and the measured noise voltage of the preamplifier output is 0.435 mV. The results suggest that the time-domain Hspice noise simulation can be used to design the low noise readout IC.
Keywords :
MOS integrated circuits; MOSFET; X-ray detection; cadmium compounds; preamplifiers; readout electronics; semiconductor counters; shot noise; 0.246 mV; 0.435 mV; 1.5 micron; 10 MHz; CMOS low-noise fast readout IC; CZT; CdZnTe; MOSFET; MOSIS; RMS total noise voltage; X-ray detectors; continuously discharged preamplifier; detector shot noise; feedback capacitor; input transistor; noise voltage; preamplifier; time-domain Hspice noise simulation; CMOS integrated circuits; CMOS technology; Feedback; Integrated circuit noise; MOSFETs; Preamplifiers; Sensor arrays; Time domain analysis; Voltage; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2002 IEEE
Print_ISBN :
0-7803-7636-6
DOI :
10.1109/NSSMIC.2002.1239279
