Simulation of semiconductor mode-locked ring lasers with monolithically integrated passive pulse shaping elements

Author

Bente, E.A.J.M. ; Heck, M.J.R. ; Barbarin, Y. ; Lenstra, D. ; Smit, M.K.

Author_Institution

COBRA Res. Inst., Technische Univ. Eindhoven, Netherlands

fYear

2005

fDate

19-22 Sept. 2005

Firstpage

107

Lastpage

108

Abstract

We present a model to simulate passive mode-locking in InP/InGaAsP monolithically integrated extended cavity ring lasers that include both active and passive components. For the development of integrated femtosecond semiconductor lasers we have extended the design for a PML ring laser with integrated pulse shaping components. Simulations of these designs show output pulse durations down to 300 fs.

Keywords

gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optoelectronics; laser cavity resonators; laser mode locking; optical pulse shaping; ring lasers; semiconductor lasers; 300 fs; InP-InGaAsP; extended cavity ring lasers; integrated femtosecond semiconductor lasers; integrated pulse shaping component; monolithically integrated passive pulse shaping element; passively mode locked ring laser; semiconductor mode-locked ring lasers simulation; Laser mode locking; Laser modes; Optical pulse shaping; Optical pulses; Pulse shaping methods; Ring lasers; Semiconductor lasers; Semiconductor optical amplifiers; Ultrafast optics; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-9149-7

Type

conf

DOI

10.1109/NUSOD.2005.1518158

Filename

1518158