Title :
Transparent emitter contact HBT´s for direct optical injection locking of oscillators
Author :
Karakucuk, M. ; Li, W. ; Freeman, P. ; East, J. ; Haddad, G.I. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Direct optical injection locking and tuning of high frequency oscillators made with GaAs-AlGaAs heterojunction bipolar transistors (HBT´s) have been investigated. A new HBT technology using transparent indium-tin-oxide (ITO) emitter contacts for convenient optical access has been developed. Optical injection locking and tuning experiments have been performed on 6 GHz HBT oscillators. A locking range up to 2.5 MHz, and a tuning range up to 25 MHz have been measured with the injection of optical RF power at 30 dB below the oscillator power level.<>
Keywords :
gallium arsenide; heterojunction bipolar transistors; microwave oscillators; solid-state microwave circuits; solid-state microwave devices; tuning; 6 GHz; GaAs-AlGaAs; ITO; ITO emitter contacts; InSnO; SHF oscillators; direct optical injection locking; heterojunction bipolar transistors; transparent emitter contact HBT; tuning; Heterojunction bipolar transistors; Indium tin oxide; Injection-locked oscillators; Optical tuning; Power measurement; Radio frequency; Stimulated emission;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335151
