Title :
Very high isolation optoelectronic switch using PIN-PD and GaAs MESFET transmission gate
Author :
Liu, Q.Z. ; MacDonald, R.I.
Author_Institution :
Telecommun. Res. Lab., Edmonton, Alta., Canada
Abstract :
A novel broadband optoelectronic switch is demonstrated experimentally with very high isolation. The switch consists of a switching PIN photodiode followed by a GaAs MESFET in common gate configuration as a transmission gate. Isolation level higher than 70.0 dB at DC and 55.0 dB at 1.0 GHz was obtained, respectively.<>
Keywords :
gallium arsenide; integrated optoelectronics; optical switches; p-i-n photodiodes; semiconductor switches; 0 to 1 GHz; GaAs; GaAs MESFET transmission gate; broadband switch; common gate configuration; high isolation; optoelectronic switch; switching PIN photodiode; Gallium arsenide; MESFETs; PIN photodiodes; Switches;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335152
