Title :
Design and fabrication of 5 Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM
Author :
Shih, C.-G. ; Barlage, D. ; Wang, J.-S. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
We report a high performance blanket ion implanted 0.6 /spl mu/m GaAs-MESFET/MSM receiver circuit. The receiver is fabricated without the use of a grown layer which opens the door for low cost applications. The significance of this work is that the full receiver exhibits an electrical dynamic range of 36 dB, and produces a minimum 700 mV electrical output signals at -15 dBm optical input. Data rates in excess of 5 Gb/s have been achieved utilizing a 75/spl times/75 /spl mu/m MSM detector.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated optoelectronics; ion implantation; metal-semiconductor-metal structures; optical receivers; 0.6 micron; 5 Gbit/s; GaAs; MSM detector; electrical dynamic range; fabrication; integrated OEIC receivers; ion implanted GaAs MESFET; Circuits; Costs; Dynamic range; Fabrication; Optical receivers; Optoelectronic devices;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335154
