Title :
A charge pump without overstress for standard cmos process with improved current driver capability
Author :
Cruz, Carlos A M ; Filho, Carlos A R ; Lima, José E S
Author_Institution :
CT-PIM, Technol. & Inovation Center for the Ind. of Manaus, Manaus, Brazil
Abstract :
Many charge pump structures that overcome gate-oxide overstress have been proposed in the last few years. Though they differ in the number of phases and in efficiency, they have almost the same current driver capability. A new charge pump without gate-oxide overstress, with a better current driver capability is proposed here. The new circuit is derived from a two-phase charge pump in order to inherit its efficiency. A four-stage structure of the proposed circuit has shown a driver current capability 40% better than the previous solutions. The proposed circuit is also faster than the previous charge pumps that overcome gate-oxide overstress.
Keywords :
CMOS integrated circuits; charge pump circuits; driver circuits; CMOS process; charge pump circuits; current driver capability; CMOS process; CMOS technology; Capacitors; Charge pumps; Clocks; Diodes; Driver circuits; Immune system; MOS devices; Voltage; charge pump; low power; overdrive; overstress; reliability;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 2008. IEEEI 2008. IEEE 25th Convention of
Conference_Location :
Eilat
Print_ISBN :
978-1-4244-2481-8
Electronic_ISBN :
978-1-4244-2482-5
DOI :
10.1109/EEEI.2008.4736606
