Title :
Comparison of active versus passive on-wafer load-pull characterisation of microwave and mm-wave power devices
Author :
Muller, J.-E. ; Gyselinckx, B.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
On-wafer load-pull measurements using passive or active loads help to speed up the power transistor and power MMIC development. The characteristics of various types of loads are compared with respect to simple adjustment and range of load reflection coefficients, dynamic power range limitations and oscillations problems. In case of the active load a perturbation analysis is used for reducing inherent problem areas. To an existing passive on-wafer load-pull measurement setup a feedback type active load was additionally implemented. Because of its simpler operation the passive load is used whenever its tuning range is sufficient. If not, it is substituted by an active load allowing complete coverage of the Smith Chart.<>
Keywords :
MMIC; microwave integrated circuits; microwave measurement; power integrated circuits; power transistors; solid-state microwave devices; Smith Chart; dynamic power range limitations; feedback type active load; load reflection coefficients; microwave power devices; mm-wave power devices; on-wafer load-pull characterisation; oscillations problems; perturbation analysis; power MMIC; power transistor; tuning range; Dynamic range; Feedback; MMICs; Power measurement; Power transistors; Reflection; Tuning; Velocity measurement;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335168