DocumentCode
2190809
Title
Modeling and measurement of 1/f noise characteristics of silicon BJTs
Author
Costa, J.C. ; Ngo, D. ; Jackson, R. ; Lovelace, D. ; Camilleri, N. ; Jaffee, J.
Author_Institution
Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
fYear
1994
fDate
23-27 May 1994
Firstpage
1073
Abstract
We present a method for measuring and extracting the BJT SPICE noise model parameters AF and KF based on an analysis of the general small signal equivalent circuit and the role of the BJT noise sources. Modeled and measured low-frequency noise data is presented for three high-frequency Motorola bipolar technologies.<>
Keywords
SPICE; bipolar transistors; electric noise measurement; elemental semiconductors; equivalent circuits; random noise; semiconductor device models; semiconductor device noise; silicon; solid-state microwave devices; 1/f noise characteristics; Motorola bipolar technologies; SPICE noise model parameters; Si; low-frequency noise data; silicon BJTs; small signal equivalent circuit; Circuit noise; Data mining; Equivalent circuits; Low-frequency noise; Noise measurement; SPICE; Signal analysis; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335169
Filename
335169
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