Title :
Modeling and measurement of 1/f noise characteristics of silicon BJTs
Author :
Costa, J.C. ; Ngo, D. ; Jackson, R. ; Lovelace, D. ; Camilleri, N. ; Jaffee, J.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
Abstract :
We present a method for measuring and extracting the BJT SPICE noise model parameters AF and KF based on an analysis of the general small signal equivalent circuit and the role of the BJT noise sources. Modeled and measured low-frequency noise data is presented for three high-frequency Motorola bipolar technologies.<>
Keywords :
SPICE; bipolar transistors; electric noise measurement; elemental semiconductors; equivalent circuits; random noise; semiconductor device models; semiconductor device noise; silicon; solid-state microwave devices; 1/f noise characteristics; Motorola bipolar technologies; SPICE noise model parameters; Si; low-frequency noise data; silicon BJTs; small signal equivalent circuit; Circuit noise; Data mining; Equivalent circuits; Low-frequency noise; Noise measurement; SPICE; Signal analysis; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335169
